4 MBIT, 3.0V (2.7V TO 3.6V), -40
BY25D40ESOIG(R) is a Memory manufactured by BYTe Semiconductor. 4 MBIT, 3.0V (2.7V TO 3.6V), -40. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 2.7V ~ 3.6V, package / case 8-TSSOP (0.173", 4.40mm Width).
In Stock: 1,986
| Attribute | Value |
|---|---|
| DigiKey Programmable | - |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 4Mbit |
| Memory Organization | 512K x 8 |
| Memory Interface | SPI - Dual I/O |
| Clock Frequency | 120 MHz |
| Write Cycle Time - Word, Page | 3.6ms |
| Access Time | 7 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
| Supplier Device Package | 8-TSSOP |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| BY25D40ESTIG(T) | BYTe Semiconductor | 4 MBIT, 3.0V (2.7V TO 3.6V), -40 | 100% | View |
| BY25D16ASOIG(R) | BYTe Semiconductor | IC FLASH 16MBIT SPI/DUAL 8TSSOP | 91% | View |
| EM008LXQBDH13IS1T | Everspin Technologies Inc. | IC RAM 8MB XSPI/QUAD 8DFN | 88% | View |
| W25M512JWFIQ | Winbond Electronics | SPIFLASH, 1.8V, 512M-BIT, 4KB UN | 85% | View |
| GD25Q128ESIGR | GigaDevice Semiconductor (HK) Limited | 128MBIT NOR FLASH /3.3V /SOP8 20 | 78% | View |
| W25N512GVFIT | Winbond Electronics | 512MB SERIAL NAND FLASH, 3V | 68% | View |
Submit your RFQ for BY25D40ESOIG(R) and get a quote within 24 hours.
3J LIMITED
