1 MBIT, 3.0V (2.7V TO 3.6V), -40
BY25D10ASMIG(R) is a Memory manufactured by BYTe Semiconductor. 1 MBIT, 3.0V (2.7V TO 3.6V), -40. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 2.7V ~ 3.6V, package / case 8-UFDFN Exposed Pad.
In Stock: 5,820
| Attribute | Value |
|---|---|
| DigiKey Programmable | - |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 1Mbit |
| Memory Organization | 128K x 8 |
| Memory Interface | SPI - Dual I/O |
| Clock Frequency | 108 MHz |
| Write Cycle Time - Word, Page | 2.4ms |
| Access Time | 7 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-UFDFN Exposed Pad |
| Supplier Device Package | 8-USON (2x3) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| BY25D40ASOIG(T) | BYTe Semiconductor | IC FLASH 4MBIT SPI/DUAL 8TSSOP | 100% | View |
| S3A8004R0M-JI1ATD0 | Netsol | IC RAM 8M SPI/QUAD I/O 108MHZ | 94% | View |
| W25N02KVSFIR TR | Winbond Electronics | 2G-BIT SERIAL NAND FLASH, 3V | 85% | View |
| W25N01KVZPIR | Winbond Electronics | IC FLASH 1GBIT SPI/QUAD 8WSON | 85% | View |
| AT25SF041B-SHB-B | Renesas Electronics Corporation | IC FLASH 4MBIT SPI/QUAD 8SOIC | 82% | View |
| W25N512GWFIT | Winbond Electronics | 512MB SERIAL NAND FLASH, 1.8V | 79% | View |
Submit your RFQ for BY25D10ASMIG(R) and get a quote within 24 hours.
3J LIMITED
