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SIA413DJ-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single

SIA413DJ-T1-GE3

Vishay Siliconix

MOSFET P-CH 12V 12A PPAK SC70-6

SIA413DJ-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 12V 12A PPAK SC70-6. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SC-70-6.

In Stock: 17,999

Product Attributes

AttributeValue
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12 V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs29mOhm @ 6.7A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs57 nC @ 8 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds1800 pF @ 10 V
FET Feature-
Power Dissipation (Max)3.5W (Ta), 19W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SC-70-6
Package / CasePowerPAK® SC-70-6

Frequently Asked Questions

SIA413DJ-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 12V 12A PPAK SC70-6

The mounting type of SIA413DJ-T1-GE3 is Surface Mount.

The operating temperature range of SIA413DJ-T1-GE3 is -55°C ~ 150°C (TJ).

The package type of SIA413DJ-T1-GE3 is PowerPAK® SC-70-6.

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