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SI5419DU-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Single

SI5419DU-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 12A PPAK CHIPFET

SI5419DU-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 30V 12A PPAK CHIPFET. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® ChipFET™ Single.

In Stock: 11,979

Product Attributes

AttributeValue
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs20mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1400 pF @ 15 V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 31W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® ChipFET™ Single
Package / CasePowerPAK® ChipFET™ Single

Frequently Asked Questions

SI5419DU-T1-GE3 is a Transistors - FETs, MOSFETs - Single manufactured by Vishay Siliconix. MOSFET P-CH 30V 12A PPAK CHIPFET

The mounting type of SI5419DU-T1-GE3 is Surface Mount.

The operating temperature range of SI5419DU-T1-GE3 is -55°C ~ 150°C (TJ).

The package type of SI5419DU-T1-GE3 is PowerPAK® ChipFET™ Single.

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