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SI4210DY-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays

SI4210DY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 6.5A 8-SOIC

SI4210DY-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2N-CH 30V 6.5A 8-SOIC. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-SOIC (0.154", 3.90mm Width), power - max 2.7W.

In Stock: 28

Product Attributes

AttributeValue
Product StatusObsolete
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C6.5A
Rds On (Max) @ Id, Vgs35.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds445pF @ 15V
Power - Max2.7W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

Frequently Asked Questions

SI4210DY-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2N-CH 30V 6.5A 8-SOIC

The mounting type of SI4210DY-T1-GE3 is Surface Mount.

The operating temperature range of SI4210DY-T1-GE3 is -55°C ~ 150°C (TJ).

The package type of SI4210DY-T1-GE3 is 8-SOIC (0.154", 3.90mm Width).

Yes, SI4210DY-T1-GE3 is listed as Obsolete. Consider requesting a quote for alternative parts.

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