Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO214AC
US1MHE3_A/I is a Diodes - Rectifiers - Single manufactured by Vishay General Semiconductor - Diodes Division. DIODE GEN PURP 1KV 1A DO214AC. Key specifications: mounting type Surface Mount, package / case DO-214AC, SMA.
In Stock: 22,438
| Attribute | Value |
|---|---|
| Product Status | Active |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 1 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 75 ns |
| Current - Reverse Leakage @ Vr | 10 µA @ 1000 V |
| Capacitance @ Vr, F | 10pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | DO-214AC, SMA |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 150°C |
Submit your RFQ for US1MHE3_A/I and get a quote within 24 hours.
3J LIMITED
