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RN2116MFV,L3F - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Single, Pre-Biased

RN2116MFV,L3F

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A VESM

RN2116MFV,L3F is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by Toshiba Semiconductor and Storage. TRANS PREBIAS PNP 50V 0.1A VESM. Key specifications: mounting type Surface Mount, package / case SOT-723, current - collector (ic) (max) 100 mA, power - max 150 mW.

In Stock: 16,000

Product Attributes

AttributeValue
Product StatusActive
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max150 mW
Mounting TypeSurface Mount
Package / CaseSOT-723
Supplier Device PackageVESM

Frequently Asked Questions

RN2116MFV,L3F is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by Toshiba Semiconductor and Storage. TRANS PREBIAS PNP 50V 0.1A VESM

The mounting type of RN2116MFV,L3F is Surface Mount.

The package type of RN2116MFV,L3F is SOT-723.

The current rating of RN2116MFV,L3F is 100 mA.

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