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RJK1001DPN-E0#T2 - Renesas Electronics America Inc - Transistors - FETs, MOSFETs - Single

RJK1001DPN-E0#T2

Renesas Electronics America Inc

MOSFET N-CH 100V 80A TO220AB

RJK1001DPN-E0#T2 is a Transistors - FETs, MOSFETs - Single manufactured by Renesas Electronics America Inc. MOSFET N-CH 100V 80A TO220AB. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-220-3.

In Stock: 3,363

Product Attributes

AttributeValue
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C80A (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs5.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs147 nC @ 10 V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds10 pF @ 10 V
FET Feature-
Power Dissipation (Max)200W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

Frequently Asked Questions

RJK1001DPN-E0#T2 is a Transistors - FETs, MOSFETs - Single manufactured by Renesas Electronics America Inc. MOSFET N-CH 100V 80A TO220AB

The mounting type of RJK1001DPN-E0#T2 is Through Hole.

The operating temperature range of RJK1001DPN-E0#T2 is 150°C (TJ).

The package type of RJK1001DPN-E0#T2 is TO-220-3.

Yes, RJK1001DPN-E0#T2 is listed as Obsolete. Consider requesting a quote for alternative parts.

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