Renesas Electronics America Inc
IC SRAM 4.5MBIT PARALLEL 119PBGA
IDT71V3556S100BGI8 is a Memory manufactured by Renesas Electronics America Inc. IC SRAM 4.5MBIT PARALLEL 119PBGA. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 3.135V ~ 3.465V, package / case 119-BGA.
In Stock: 5,721
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Synchronous, SDR (ZBT) |
| Memory Size | 4.5Mb (128K x 36) |
| Memory Interface | Parallel |
| Clock Frequency | 100 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 5 ns |
| Voltage - Supply | 3.135V ~ 3.465V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 119-BGA |
| Supplier Device Package | 119-PBGA (14x22) |
IDT71V3556S100BGI8 is Obsolete. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| W9816G6JB-7I | Winbond Electronics | 16MB, SDR SDRAM, 143MHZ, IND TEM | 80% | View |
| W9864G2JB-6I TR | Winbond Electronics | IC DRAM 64MBIT PARALLEL 90TFBGA | 74% | View |
| MT48H16M16LFBF-6 IT:H | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 54VFBGA | 66% | View |
| MT46H64M32LFCX-6 AT:B | Micron Technology Inc. | IC DRAM 2GBIT PARALLEL 90VFBGA | 66% | View |
| AS4C64M32MD1-5BIN | Alliance Memory, Inc. | IC DRAM 2GBIT PARALLEL 90FBGA | 57% | View |
| W94AD2KBJX5I TR | Winbond Electronics | IC DRAM 1GBIT PARALLEL 90VFBGA | 57% | View |
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