Renesas Electronics America Inc
IC SRAM 1MBIT PARALLEL 44SOJ
IDT71016S20YI is a Memory manufactured by Renesas Electronics America Inc. IC SRAM 1MBIT PARALLEL 44SOJ. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 4.5V ~ 5.5V, package / case 44-BSOJ (0.400", 10.16mm Width).
In Stock: 7,232
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 1Mb (64K x 16) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 20ns |
| Access Time | 20 ns |
| Voltage - Supply | 4.5V ~ 5.5V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 44-BSOJ (0.400", 10.16mm Width) |
| Supplier Device Package | 44-SOJ |
IDT71016S20YI is Obsolete. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IS61WV102416ALL-20MLI-TR | ISSI, Integrated Silicon Solution Inc | IC SRAM 16MBIT PAR 48MINIBGA | 79% | View |
| IS43TR16128C-125KBLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 2GBIT PARALLEL 96TWBGA | 70% | View |
| IS46TR81280B-125JBLA25-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 1GBIT PARALLEL 78TWBGA | 70% | View |
| IS49NLS18160-25WBLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 288MBIT PAR 144TWBGA | 70% | View |
| AS4C128M8D3LB-12BAN | Alliance Memory, Inc. | IC DRAM 1GBIT PARALLEL 78FBGA | 68% | View |
| MT41K512M8DA-107 XIT:P | Micron Technology Inc. | IC DRAM 4GBIT PARALLEL 78FBGA | 61% | View |
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