Renesas Electronics America Inc
IC SRAM 1MBIT PARALLEL 44SOJ
71V016SA20YG8 is a Memory manufactured by Renesas Electronics America Inc. IC SRAM 1MBIT PARALLEL 44SOJ. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 70°C (TA), voltage - supply 3V ~ 3.6V, package / case 44-BSOJ (0.400", 10.16mm Width).
In Stock: 5,836
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 1Mb (64K x 16) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 20ns |
| Access Time | 20 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 44-BSOJ (0.400", 10.16mm Width) |
| Supplier Device Package | 44-SOJ |
71V016SA20YG8 is Obsolete. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| CY7C037AV-20AXC | Infineon Technologies | IC SRAM 576KBIT PARALLEL 100TQFP | 100% | View |
| 7008S20PF | Renesas Electronics America Inc | IC SRAM 512KBIT PARALLEL 100TQFP | 92% | View |
| IS49NLC93200-33BL | ISSI, Integrated Silicon Solution Inc | IC DRAM 288MBIT PAR 144FCBGA | 82% | View |
| IS49NLC36800-25BL | ISSI, Integrated Silicon Solution Inc | IC DRAM 288MBIT PAR 144FCBGA | 82% | View |
| AS4C64M16D3LB-12BIN | Alliance Memory, Inc. | IC DRAM 1GBIT PARALLEL 96FBGA | 76% | View |
| W632GU6NB09I TR | Winbond Electronics | 2GB DDR3L 1.35V SDRAM, X16, INDU | 76% | View |
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