Renesas Electronics America Inc
IC SRAM 18MBIT PARALLEL 119PBGA
71T75802S200BGG is a Memory manufactured by Renesas Electronics America Inc. IC SRAM 18MBIT PARALLEL 119PBGA. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 70°C (TA), voltage - supply 2.375V ~ 2.625V, package / case 119-BGA.
In Stock: 8,309
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Synchronous, SDR (ZBT) |
| Memory Size | 18Mb (1M x 18) |
| Memory Interface | Parallel |
| Clock Frequency | 200 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 3.2 ns |
| Voltage - Supply | 2.375V ~ 2.625V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 119-BGA |
| Supplier Device Package | 119-PBGA (14x22) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| 71T75802S200PFGI8 | Renesas Electronics America Inc | IC SRAM 18MBIT PARALLEL 100TQFP | 100% | View |
| CY7C1354DV25-200BZI | Infineon Technologies | IC SRAM 9MBIT PARALLEL 165FBGA | 100% | View |
| CY7C1462SV25-200AXCT | Infineon Technologies | IC SRAM 36MBIT PARALLEL 100TQFP | 100% | View |
| IDT71T75602S200BGGI8 | Renesas Electronics America Inc | IC SRAM 18MBIT PARALLEL 119PBGA | 100% | View |
| MSQ220BJC288-12 | MoSys, Inc. | IC SRAM 512MBIT PAR 288FCBGA | 100% | View |
| MSR820BJE288-10 | MoSys, Inc. | IC SRAM 576MBIT PAR 288FCBGA | 100% | View |
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