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70T659S10DR - Renesas Electronics America Inc - Memory

70T659S10DR

Renesas Electronics America Inc

IC SRAM 4.5MBIT PARALLEL 208PQFP

70T659S10DR is a Memory manufactured by Renesas Electronics America Inc. IC SRAM 4.5MBIT PARALLEL 208PQFP. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 70°C (TA), voltage - supply 2.4V ~ 2.6V, package / case 208-BFQFP.

In Stock: 7,973

Product Attributes

AttributeValue
Product StatusObsolete
Memory TypeVolatile
Memory FormatSRAM
TechnologySRAM - Dual Port, Asynchronous
Memory Size4.5Mb (128K x 36)
Memory InterfaceParallel
Clock Frequency-
Write Cycle Time - Word, Page10ns
Access Time10 ns
Voltage - Supply2.4V ~ 2.6V
Operating Temperature0°C ~ 70°C (TA)
Mounting TypeSurface Mount
Package / Case208-BFQFP
Supplier Device Package208-PQFP (28x28)

Frequently Asked Questions

70T659S10DR is a Memory manufactured by Renesas Electronics America Inc. IC SRAM 4.5MBIT PARALLEL 208PQFP

The mounting type of 70T659S10DR is Surface Mount.

The operating temperature range of 70T659S10DR is 0°C ~ 70°C (TA).

The supply voltage of 70T659S10DR is 2.4V ~ 2.6V.

The memory specification of 70T659S10DR is 4.5Mb (128K x 36).

Alternative Products

70T659S10DR is Obsolete. Consider these compatible alternatives:

Part NumberManufacturerDescriptionMatch
IS61WV10248BLL-10MLI ISSI, Integrated Silicon Solution Inc IC SRAM 8MBIT PARALLEL 48MINIBGA 100% View
IS64WV20488BLL-10CTLA3 ISSI, Integrated Silicon Solution Inc IC SRAM 16MBIT PAR 44TSOP II 100% View
70T659S10BCI8 Renesas Electronics America Inc IC SRAM 4.5MBIT PAR 256CABGA 100% View
IS61WV25616BLL-10BI-TR ISSI, Integrated Silicon Solution Inc IC SRAM 4MBIT PARALLEL 48MINIBGA 100% View
70T651S10BFG Renesas Electronics America Inc IC SRAM 9MBIT PARALLEL 208FPBGA 100% View
CY7C1061GN30-10ZSXIT Infineon Technologies IC SRAM 16MBIT PAR 54TSOP II 98% View

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