NP28N10SDE-E1-AY - MOS FIELD EFF
NP28N10SDE-E1-AY is a Transistors - FETs, MOSFETs - Single manufactured by Renesas. NP28N10SDE-E1-AY - MOS FIELD EFF. Key specifications: mounting type Surface Mount, operating temperature 175°C, package / case TO-252-3, DPak (2 Leads + Tab), SC-63.
In Stock: 2,500
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 14A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3300 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta), 100W (Tc) |
| Operating Temperature | 175°C |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252 (MP-3ZK) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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