2SB601 - PNP SILICON EPITAXIAL T
2SB601-AZ is a Transistors - Bipolar (BJT) - Single manufactured by Renesas. 2SB601 - PNP SILICON EPITAXIAL T. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-220-3, current - collector (ic) (max) 5 A.
In Stock: 4,453
| Attribute | Value |
|---|---|
| Product Status | Obsolete |
| Transistor Type | PNP - Darlington |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 3mA, 3A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 3A, 2V |
| Power - Max | 1.5 W |
| Frequency - Transition | - |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
Submit your RFQ for 2SB601-AZ and get a quote within 24 hours.
3J LIMITED
