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MKI50-12F7 - IXYS - Transistors - IGBTs - Modules

MKI50-12F7

IXYS

IGBT MODULE 1200V 65A 350W E2

MKI50-12F7 is a Transistors - IGBTs - Modules manufactured by IXYS. IGBT MODULE 1200V 65A 350W E2. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 125°C (TJ), package / case E2, current - collector (ic) (max) 65 A.

In Stock: 6

Product Attributes

AttributeValue
Product StatusActive
IGBT TypeNPT
ConfigurationFull Bridge Inverter
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)65 A
Power - Max350 W
Vce(on) (Max) @ Vge, Ic3.8V @ 15V, 50A
Current - Collector Cutoff (Max)700 µA
Input Capacitance (Cies) @ Vce3.3 nF @ 25 V
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 125°C (TJ)
Mounting TypeChassis Mount
Package / CaseE2
Supplier Device PackageE2

Frequently Asked Questions

MKI50-12F7 is a Transistors - IGBTs - Modules manufactured by IXYS. IGBT MODULE 1200V 65A 350W E2

The mounting type of MKI50-12F7 is Chassis Mount.

The operating temperature range of MKI50-12F7 is -40°C ~ 125°C (TJ).

The package type of MKI50-12F7 is E2.

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