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IPTG111N20NM3FDATMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single

IPTG111N20NM3FDATMA1

Infineon Technologies

TRENCH >=100V PG-HSOG-8

IPTG111N20NM3FDATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. TRENCH >=100V PG-HSOG-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case 8-PowerSMD, Gull Wing.

In Stock: 1,795

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C10.8A (Ta), 108A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs11.1mOhm @ 96A, 10V
Vgs(th) (Max) @ Id4V @ 267µA
Gate Charge (Qg) (Max) @ Vgs81 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7000 pF @ 100 V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 375W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-HSOG-8-1
Package / Case8-PowerSMD, Gull Wing

Frequently Asked Questions

IPTG111N20NM3FDATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. TRENCH >=100V PG-HSOG-8

The mounting type of IPTG111N20NM3FDATMA1 is Surface Mount.

The operating temperature range of IPTG111N20NM3FDATMA1 is -55°C ~ 175°C (TJ).

The package type of IPTG111N20NM3FDATMA1 is 8-PowerSMD, Gull Wing.

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