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IPP126N10N3GXKSA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single

IPP126N10N3GXKSA1

Infineon Technologies

MOSFET N-CH 100V 58A TO220-3

IPP126N10N3GXKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 100V 58A TO220-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-220-3.

In Stock: 1

Product Attributes

AttributeValue
Product StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs12.3mOhm @ 46A, 10V
Vgs(th) (Max) @ Id3.5V @ 46µA
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2500 pF @ 50 V
FET Feature-
Power Dissipation (Max)94W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

Frequently Asked Questions

IPP126N10N3GXKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 100V 58A TO220-3

The mounting type of IPP126N10N3GXKSA1 is Through Hole.

The operating temperature range of IPP126N10N3GXKSA1 is -55°C ~ 175°C (TJ).

The package type of IPP126N10N3GXKSA1 is TO-220-3.

Yes, IPP126N10N3GXKSA1 is listed as Not For New Designs. Consider requesting a quote for alternative parts.

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