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IPAW60R180P7SXKSA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single

IPAW60R180P7SXKSA1

Infineon Technologies

MOSFET N-CHANNEL 650V 18A TO220

IPAW60R180P7SXKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CHANNEL 650V 18A TO220. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3 Full Pack.

In Stock: 903

Product Attributes

AttributeValue
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs180mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id4V @ 280µA
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1081 pF @ 400 V
FET Feature-
Power Dissipation (Max)26W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220 Full Pack
Package / CaseTO-220-3 Full Pack

Frequently Asked Questions

IPAW60R180P7SXKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CHANNEL 650V 18A TO220

The mounting type of IPAW60R180P7SXKSA1 is Through Hole.

The operating temperature range of IPAW60R180P7SXKSA1 is -55°C ~ 150°C (TJ).

The package type of IPAW60R180P7SXKSA1 is TO-220-3 Full Pack.

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