RFQ List

No items in your RFQ list

Estimated Total: $0.00
View RFQ List
HGTA32N60E2 - Harris Corporation - Transistors - IGBTs - Single

HGTA32N60E2

Harris Corporation

32A, 600V N-CHANNEL IGBT

HGTA32N60E2 is a Transistors - IGBTs - Single manufactured by Harris Corporation. 32A, 600V N-CHANNEL IGBT. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-218-5, current - collector (ic) (max) 50 A.

In Stock: 215

Product Attributes

AttributeValue
Product StatusActive
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)50 A
Current - Collector Pulsed (Icm)200 A
Vce(on) (Max) @ Vge, Ic2.9V @ 15V, 32A
Power - Max208 W
Switching Energy-
Input TypeStandard
Gate Charge265 nC
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-218-5
Supplier Device PackageTO-218-5

Frequently Asked Questions

HGTA32N60E2 is a Transistors - IGBTs - Single manufactured by Harris Corporation. 32A, 600V N-CHANNEL IGBT

The mounting type of HGTA32N60E2 is Through Hole.

The operating temperature range of HGTA32N60E2 is -55°C ~ 150°C (TJ).

The package type of HGTA32N60E2 is TO-218-5.

Related Products

Manufacturers in Transistors - IGBTs - Single

Need a Quote for This Part?

Submit your RFQ for HGTA32N60E2 and get a quote within 24 hours.

Top
Live Chat
Hello! How can we help you today? Feel free to ask about pricing, availability, or technical details.