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GES5816 - Harris Corporation - Transistors - Bipolar (BJT) - Single

GES5816

Harris Corporation

TRANS NPN 40V 0.75A TO92

GES5816 is a Transistors - Bipolar (BJT) - Single manufactured by Harris Corporation. TRANS NPN 40V 0.75A TO92. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 135°C (TJ), package / case TO-226-3, TO-92-3 (TO-226AA), current - collector (ic) (max) 750 mA.

In Stock: 16,472

Product Attributes

AttributeValue
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)750 mA
Voltage - Collector Emitter Breakdown (Max)40 V
Vce Saturation (Max) @ Ib, Ic750mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 2mA, 2V
Power - Max500 mW
Frequency - Transition120MHz
Operating Temperature-55°C ~ 135°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92

Frequently Asked Questions

GES5816 is a Transistors - Bipolar (BJT) - Single manufactured by Harris Corporation. TRANS NPN 40V 0.75A TO92

The mounting type of GES5816 is Through Hole.

The operating temperature range of GES5816 is -55°C ~ 135°C (TJ).

The package type of GES5816 is TO-226-3, TO-92-3 (TO-226AA).

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